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High School/JEE/NEET/IPhO Physics | 17-19 Yrs
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High School/JEE/NEET/IPhO Physics | 17-19 Yrs

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Respected sir I thinks resistance for reverse biasing should be inversely proportional to thickness of depletion layer because greater electric field cause easier for breakdown of pn junction?

10 years ago by sudeep khare

Ans 1 ->

usually, the external potential difference in PN junction does not exceed the breakdown voltage in reverse bias as it is not designed for that

7 years ago by ABHISHEK SHANKAR

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High School/JEE/NEET/IPhO Physics | 17-19 Yrs

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